dan235e / DAN235U diodes band switching diode dan235e / DAN235U ! ! ! ! applications high frequency switching ! ! ! ! features 1) small surface mounting type. (emd3, umd3) 2) high reliability. ! ! ! ! construction silicon epitaxial planar ! ! ! ! circuit ! ! ! ! external dimensions (units : mm) 0.2 0.2 0.5 0.5 1.0 0.1 1.6 0.2 0.3 0.8 0.1 1.6 0.2 ? 0.05 + 0.1 + 0.1 ? 0.05 + 0.1 ? 0.05 0.55 0.1 0.7 0.1 0.15 0.05 0 ~ 0.1 0.1min. rohm : emd3 eiaj : sc - 75 jedec : sot-416 rohm : umd3 eiaj : sc - 70 jedec : sot-323 m (all leads have the same dimensions) 2.1 0.1 1.25 0.1 0.1min. 0 ~ 0.1 0.15 0.05 0.3 0.1 2.0 0.2 1.3 0.1 0.65 0.65 0.9 0.1 0.3 0.6 m dan235e DAN235U ! ! ! ! absolute maximum ratings (ta=25 c) parameter symbol limits unit v r 35 v pd 150 mw 125 c c tj tstg ? 55 ~ + 125 dc reverse voltage power dissipation junction temperature storage temperature
dan235e / DAN235U diodes ! ! ! ! electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions v f ? 1.0 v i f = 10ma i r ? 10 na v r = 25v ? 1.2 pf v r = 6v, f = 1mhz r f ? 0.9 ? i f = 2ma, f = 100mhz c t 0.85 0.01 0.87 0.65 forward voltage reverse current capacitance between terminals forward operating resistance ! ! ! ! electrical characteristic curves (ta=25 c) 100m 10m 1m 100 10 0.6 0.7 0.8 0.9 1.0 ta = 25 c forward current : i f ( a) forward voltage : v f ( v) fig. 1 forward characteristics 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0 5 10 15 20 25 30 35 ta = 25 c n = 50pcs reverse current : i r ( na) reverse voltage : v r ( v) fig. 2 reverse characteristics 0 2 4 6 8 10 12 14 10 5 2 1 0.5 0.2 0.1 f = 1mhz capacitance between terminals : c t ( pf) reverse voltage : v r ( v) fig. 3 capacitance between terminals characteristics high frequency forward resistance : r f ( ?) forward current : i f ( ma) fig. 4 forward operating resistance characteristics 0 3.0 2.5 1.5 1.0 0.5 10 5 2 1 0.5 0.2 0.1 f = 1mhz 0 0 20 40 60 80 100 25 50 75 100 125 io current (%) ambient temperature : ta ( c ) fig. 5 derating curve (mounting on glass epoxy pcbs)
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